SILICON NANOWIRE FIELD EFFECT TRANSISTORS BASED BIOSENSORS
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Keywords:
silicon nanowire
field-efect-transistor
biosensor
biomolecule detection
virus
DNA
protein
Abstract
Silicon-On-Insulator based nanowire field-effect-transistors were used to detect the molecular charges on the wire surface by measuring the changes of the wire conductance. The sensors hold a great potential for various biomedical applications due to their intrinsic advantages in many aspects including a direct, real-time electrical signal transduction, high sensitivity with minimal requirement of the target molecules, capability for multiplex parallel processing, and requiring no tedious sample labeling process Here, we presented the underlying mechanism of using nanowires for biomolecule sensing and addressed fabrication processes including: nanowire, PDMS microfluidic channel, and surface modification techniques. The experimental results showed that the high charge sensitivity of the nanowires allowed real time detection of hybridization of ssDNA with lengths as short as 15mer, and with high degree of specificity. Furthermore, demonstrations of using silicon nanowire field-efect-transistors as a detector for a wide-range of biological and chemical species, from protein down to the ultimate level of single virus were discussed.
References
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Published
Nov 30, 2014
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How to Cite
Nguyen Linh Nam. “SILICON NANOWIRE FIELD EFFECT TRANSISTORS BASED BIOSENSORS”. The University of Danang - Journal of Science and Technology, vol. 11, no. 84.2, Nov. 2014, pp. 34-37, https://jst-ud.vn/jst-ud/article/view/224.
